海角社区

Prosper Ngabonziza

Assistant Professor of Physics

Ph.D., 2016 - University of Twente, The Netherlands

Experimental Condensed Matter Physics,
Quantum Materials and Device Physics

海角社区 
Department of Physics & Astronomy
210-D Nicholson Hall, Tower Dr.
Baton Rouge, LA 70803-4001
225-578-0640-Office

pngabonziza@lsu.edu

Resume

Prosper Ngabonziza is an Assistant Professor of Physics in the Department of Physics & Astronomy of the 海角社区. After receiving a Bachelor of Science degree (BSc. in Physics) from the University of Rwanda (former National University of Rwanda), he completed with cum laude, in 2010, a postgraduate diploma in mathematical sciences at African Institute for Mathematical Sciences (AIMS), under the University of Cape Town in South Africa. In 2012, he completed a Master鈥檚 degree with cum laude in experimental physics from the University of Johannesburg in South Africa. He received in 2013 the S2A3 Bronze Medal awarded by the Southern Africa association for advancement of science to the best student who did a most meritorious master dissertation in a science department in South Africa. In 2016, he completed a PhD in engineering physics from the University of Twente, in The Netherlands. His PhD project was on topological insulators (TIs). He was combining thin film growth, characterizations and quantum transport studies of TIs. From October 2016, he was a Postdoc at the Max Planck Institute for Solid State Research in Stuttgart-Germany, in the department of solid-state quantum electronics. His research at Max Planck focused on quantum matter heterostructures fabricated from complex oxides with the goal to explore novel phenomena in devices fabricated from such heterostructures. After 6 years at Max Planck Institute, he joined the faculty at the 海角社区 in 2022.

Service to Society & community Building Activities

He is actively involved in the , as a of the African light source Foundation. The AfLS project is working towards building a synchrotron light source on the African continent that will contribute significantly to the African science renaissance.

In June 2019, he has been nominated as a Fellow to the Rwanda Academy of Science. Furthermore, he has been selected for a membership in the Global Young Academy for a period of 5 years beginning in June 2020. He served on the 2021/2022 ; and also, served as a.

Research Interests

Prosper Ngabonziza鈥檚 research focuses on epitaxy of quantum materials and heterostructures. We explore novel phases in highly crystalline quantum matter heterostructures, and investigate emergent functionalities in quantum devices fabricated from such thin films and heterostructures. Investigated material systems have potential technological applications in such fields as quantum science and technology, oxide electronics, spintronics, as well as in energy and environmental sciences. Some of the research topics that we pursue include, but are not limited to:

• Correlated Electron Systems: Research interests are on 4d correlated electron systems; in particular, ruthenates and/or magnetic functional materials (e.g., strontium ruthenate oxides of the Ruddlesden Popper phases). These systems exhibit complex interplay between the charge, spin, orbital and lattice degrees of freedom. We use bulk single crystals and thin films of these materials to explore their unique magnetic/electronic properties in the band structure, quantum transport and nanoscale electronic devices fabricated in a cleanroom facility.
• Topological Quantum Materials and Thermoelectricity: We explore the potential of topological insulator boundary states for thermoelectricity to realize a variety of high-performance thermoelectric devices. Combined studies of thin film growth and characterizations, as well as quantum transport explorations of novel functionalities in nanoscale topological devices are performed. 
• Complex Oxide Heterostructures: Our research interests are on transparent conducting oxide heterostructures for applications in the next-generation of transparent electronic devices; and on ionic conducting oxide heterostructures for applications in clean energy technologies.

Current and Select Publications

1. P. Ngabonziza*, J. Park, W. Sigle, P. A. van Aken, J. Mannhart, and D. G. Schlom, 鈥淓mploying High-temperature-grown SrZrO3 Buffer to Enhance the Electron Mobility in La:BaSnO3-based Heterostructures鈥� .
2. M. C. Newton, S. H. Connell, E. P. Mitchell, S. K. Mtingwa , P. Ngabonziza, L. Norris , T. Ntsoane and D. A. K. Traore, 鈥淏uilding a brighter future for Africa with the African Light Source鈥� .
3. A.-L. R眉land*, N. R眉ffn, K. Cramer, P. Ngabonziza, M. Saxena, and S. Skupien. 鈥淪cience Diplomacy from the Global South: the Case of Intergovernmental Science Organizations鈥� .
4. Prosper Ngabonziza*, 鈥淨uantum transport and potential of topological states for thermoelectricity in Bi2Te3 thin films鈥� .
5. G. H. Gebreyesus*, P. Ngabonziza*, J. Nagura, S. Nicola, O. Akin-Ojo, and R. M. Martin*, 鈥淓lectronic structure and magnetism of the triple-layer ruthenate Sr4Ru3O10鈥�
6. A. P. Nono Tchiomo, E. Carleschi, Aletta R. E. Prinsloo, W. Sigle, P. A. van Aken, J. Mannhart, P. Ngabonziza*, and B. P. Doyle*, 鈥淐ombined Spectroscopy and Electrical Characterization of La:BaSnO3 Thin Films and Heterostructures鈥� .
7. P. Ngabonziza, Y. Wang, P. van Aken, J. Maier, and J. Mannhart 鈥淚nelastic electron tunneling spectroscopy at high-temperatures鈥� .
8. P. Ngabonziza, R. Merkle, Y. Wang, P. van Aken J. Maier and J. Mannhart  鈥�2D doping of proton conductors: BaZrO3-based heterostructures鈥� .
9. M. P. Stehno, P. Ngabonziza*, H. Myoren, and A. Brinkman 鈥淛osephson effect and charge distribution in thin Bi2Te3 topological insulators鈥� .
10. P. Ngabonziza*, E. Carleschi, V. Zabolotnyy, A. Taleb-Ibrahimi, F. Bertran, R. Fittipaldi, V. Granata, M. Cuoco, A. Vecchione, and B. P. Doyle* 鈥淔ermi surface and kink structures in Sr4Ru3O10 revealed by synchrotron-based ARPES鈥� .
11. W. Braun, M. Ja虉ger, G. Laskin, P. Ngabonziza, W. Voesch, P. Wittlich, and J. Mannhart, 鈥淚n-situ thermal preparation of oxide surfaces鈥� .
12. A. P. Nono Tchiomo, W. Braun, B. P. Doyle, W. Sigle, P. Van Aken, J. Mannhart, and P. Ngabonziza* 鈥淗igh-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures鈥� .
13. S. H. Connell, S. K. Mtingwa, S. K. Abdel-Aal, S. Biira, T. D鈥橝lmeida, T. Dobbins, N. Khumbah, B. Masara, E. P. Mitchell, L. Norris, P. Ngabonziza, T. Ntsoane, A. Wague, and H. Winick, 鈥淭owards an African light source鈥� .
14. P. Ngabonziza, Y. Wang, and A. Brinkman 鈥淏ulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films鈥� .
15. A. P. Nono Tchiomo, G. Babu-Geetha, E. Carleschi, P. Ngabonziza, and B. P. Doyle, 鈥淪urface characterization of clean SrTiO3 (100) substrates by X-ray photoelectron spectroscopy鈥�  .
16. P. Ngabonziza, M. P. Stehno, H. Myoren, V. A. Neumann, G. Koster, and A. Brinkman 鈥淕ate-tunable transport properties of in-situ capped Bi2Te3 topological insulator thin films鈥�. .
17. P. Ngabonziza, R. Heimbuch, N. de Jong, R. A. Klaassen, M. P. Stehno, M. Snelder, A. Solmaz, S. V. Ramankutty, E. Frantzeskakis, E. Van Heumen, G. Koster, M. S. Golden, H. J.W. Zandvliet, and A. Brinkman 鈥淚n-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects鈥� .